DocumentCode :
2652633
Title :
MBE heterostructure device instabilities related to interfacial carbon impurities
Author :
Gray, M.L. ; Spector, M. ; Yoder, J.D.
Author_Institution :
AT&T Bell Laboratories, PA
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
117
Lastpage :
124
Keywords :
Epitaxial layers; FETs; Frequency; Gallium arsenide; Impedance measurement; Impurities; Molecular beam epitaxial growth; Pollution measurement; Superlattices; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752686
Filename :
752686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2652633
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