DocumentCode
2652640
Title
Exploring capacitance-voltage measurements to find the piezoelectric coefficient of aluminum nitride
Author
van Hemert, T. ; Sarakiotis, D. ; Jose, S. ; Hueting, R.J.E. ; Schmitz, J.
Author_Institution
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
fYear
2011
fDate
4-7 April 2011
Firstpage
69
Lastpage
73
Abstract
In this work we explore an uncommon method to extract the piezoelectric coefficient of the piezoelectric material aluminum nitride. The method exploits the bias dependence of CV (capacitance voltage) measurements on MπM (metal-piezoelectric-metal) capacitors. We propose a bias dependent capacitance model for piezoelectric capacitors such as BAW (Bulk Acoustic Wave) resonators. With this model we extract both the piezoelectric coefficient and dielectric constant from the CV recording. In contrast to earlier reports we verified that our results do not depend on layer thickness, biasing and sweep direction of the CV recording. In addition, we discuss the accuracy of our measurements in depth.
Keywords
aluminium compounds; bulk acoustic wave devices; capacitance measurement; capacitors; permittivity; piezoelectric devices; piezoelectric materials; resonators; voltage measurement; AlN; BAW resonators; aluminum nitride; bias dependence; bulk acoustic wave resonators; capacitance-voltage measurements; dielectric constant; metal-piezoelectric-metal capacitors; piezoelectric capacitors; piezoelectric coefficient; piezoelectric material; Capacitance; Capacitance measurement; Dielectric constant; Equations; Frequency measurement; Materials; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location
Amsterdam
ISSN
1071-9032
Print_ISBN
978-1-4244-8526-0
Electronic_ISBN
1071-9032
Type
conf
DOI
10.1109/ICMTS.2011.5976862
Filename
5976862
Link To Document