• DocumentCode
    2652677
  • Title

    Impacts of silicon nanocrystal incorporation on the transfer characteristics of poly-silicon nanowire SONOS devices

  • Author

    Lee, Ko-Hui ; Lin, Horng-Chih ; Huang, Tiao-Yuan

  • Author_Institution
    Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    10-11 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Gate-all-around poly-silicon nanowire (GAA poly-Si NW) SONOS devices embedded with silicon nanocrystals (Si-NCs) were fabricated and characterized. As Si-NCs are incorporated, the transfer characteristics show a large clockwise Id-Vg hysteresis and a small kink under reverse sweep. Si dangling bonds located at SiNC/nitride interfaces are suspected to be responsible for the observations.
  • Keywords
    dangling bonds; elemental semiconductors; hysteresis; nanofabrication; nanowires; random-access storage; silicon; Id-Vg hysteresis; Si; dangling bonds; gate-all-around poly-silicon nanowire SONOS devices; reverse sweep; silicon nanocrystal; small kink; transfer characteristics; Charge carrier processes; Clocks; Hysteresis; Logic gates; Nanoscale devices; SONOS devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2012 IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    2161-4636
  • Print_ISBN
    978-1-4673-0996-7
  • Electronic_ISBN
    2161-4636
  • Type

    conf

  • DOI
    10.1109/SNW.2012.6243353
  • Filename
    6243353
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2652677