Effect of Cu insertion layer between top electrode and switching layer on resistive switching characteristics

Author

Jung, Sunghun ; Oh, Jeong-Hoon ; Ryoo, Kyung-Chang ; Kim, Sungjun ; Lee, Jong-Ho ; Shin, Hyungcheol ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

By inserting copper (Cu) metal layer between platinum (Pt) and titanium dioxide (TiO₂), we have observed both unipolar and bipolar resistive switching characteristics in Pt/Cu/TiO₂/Pt stacked RRAM cell. In order to analyze the conduction mechanism, we have conducted I-V fitting. And based on measurement results of bias polarity dependency, we have found that copper plays a role as oxygen reservoir. It can explain redox mechanism in bipolar resistive switching cell.

Keywords

copper; electrical conductivity; electrical resistivity; metallic thin films; oxidation; platinum; random-access storage; reduction (chemical); switching; titanium compounds; Cu insertion layer effect; I-V fitting; Pt-Cu-TiO₂-Pt; bias polarity dependency; bipolar resistive switching characteristics; conduction mechanism; oxygen reservoir; redox mechanism; stacked RRAM cell; switching layer; top electrode; Copper; Electrodes; Fitting; Platinum; Resistance; Semiconductor device measurement; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243355

Filename

6243355