Silicon high frequency test structures improvement for millimeter wave varactors characterization optimization and modeling

Author

Sonnerat, F. ; Debroucke, R. ; Morandini, Y. ; Gloria, D. ; Arnould, J-D ; Gaquière, C.

fYear

2011

fDate

4-7 April 2011

Firstpage

101

Lastpage

104

Abstract

Nowadays, thanks to the capabilities offered by advanced CMOS and BiCMOS technologies for the design above 60GHz, the improvement of millimeter wave varactors is mandatory. Innovative test structures must be designed to characterize these varactors with low capacitance values (down to aF scale) and an influent parasitic environment. High frequency varactors characterization with reduced pad size and modified metal stack added to an optimized test structure positioning has been validated up to 110GHz.

Keywords

BiCMOS integrated circuits; millimetre wave devices; silicon; varactors; BiCMOS; frequency 110 GHz; frequency 60 GHz; millimeter wave varactor characterization optimization; optimized test structure positioning; silicon; test structure improvement; Capacitance; Frequency measurement; Metals; Millimeter wave technology; Probes; Resonant frequency; Varactors; High Frequency characterization; millimeter wave modeling; millimeter wave varactors; test structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on

Conference_Location

Amsterdam

ISSN

1071-9032

Print_ISBN

978-1-4244-8526-0

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2011.5976868

Filename

5976868