DocumentCode
2652749
Title
Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique
Author
Lau, W.S. ; Goo, C.H. ; Chong, T.C.
Author_Institution
National University of Singapore
fYear
1992
fDate
21-24 Apr 1992
Firstpage
153
Lastpage
156
Keywords
Annealing; Electron traps; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Spectroscopy; Substrates; Temperature; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN
0-7503-0242-9
Type
conf
DOI
10.1109/SIM.1992.752692
Filename
752692
Link To Document