Metal/Ge Schottky barrier modulation with C-containing layer by chemical bath

Author

Wang, Wei ; Wang, Jing ; Zhao, Mei ; Liang, Renrong ; Xu, Jun

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2012

fDate

10-11 June 2012

Firstpage

1

Lastpage

2

Abstract

We inserted a C-containing layer in a metal/Ge structure, using a chemical bath. This layer enabled the Schottky barrier height (SBH) to be modulated. The chemical bath with 1-octadecene and 1-dodecene were performed separately with Ge substrates. The ultrathin C-containing layer stops the penetration of free electron wave functions from the metal to the Ge. Metal-induced gap states are alleviated and the pinned Fermi level is released. The SBH is lowered to 0.17 eV. This new formation method is promising and much less complex than traditional ones.

Keywords

Fermi level; Schottky barriers; elemental semiconductors; germanium; semiconductor-metal boundaries; wave functions; 1-dodecene; 1-octadecene; Ge; Ge substrates; SBH; Schottky barrier height; Schottky barrier modulation; chemical bath; free electron wave functions; metal-induced gap states; pinned Fermi level; ultrathin C-containing layer; Chemicals; Current density; Metals; Schottky barriers; Substrates; Surface cleaning; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2012 IEEE

Conference_Location

Honolulu, HI

ISSN

2161-4636

Print_ISBN

978-1-4673-0996-7

Electronic_ISBN

2161-4636

Type

conf

DOI

10.1109/SNW.2012.6243359

Filename

6243359