DocumentCode
2652823
Title
Electrical estimation of channel dopant uniformity using test MOSFET array
Author
Terada, Kazuo ; Sanai, Kazuhiko ; Tsuji, Katsuhiro ; Tsunomura, Takaaki ; Nishida, Akio ; Mogami, Tohru
Author_Institution
Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
fYear
2011
fDate
4-7 April 2011
Firstpage
114
Lastpage
117
Abstract
The dopant uniformity in an MOSFET channel is estimated using the test MOSFET array which includes many MOSFETs with different channel length. Takeuchi coefficient as a function of the channel length is calculated from the measured threshold voltage data. The electrical channel length as a function of the gate voltage is extracted using channel resistance method. It is found that those data show the similar degree of the dopant uniformity for MOSFETs having various channel structures.
Keywords
MOSFET; semiconductor device measurement; semiconductor device testing; MOSFET channel; Takeuchi coefficient; channel dopant uniformity; channel resistance method; channel structures; electrical channel length; electrical estimation; gate voltage; test MOSFET array; threshold voltage data; Arrays; Channel estimation; Logic gates; MOSFET circuits; Resistance; Threshold voltage; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2011 IEEE International Conference on
Conference_Location
Amsterdam
ISSN
1071-9032
Print_ISBN
978-1-4244-8526-0
Electronic_ISBN
1071-9032
Type
conf
DOI
10.1109/ICMTS.2011.5976871
Filename
5976871
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