DocumentCode :
2653009
Title :
Effect of micro-uniformity on electron mobility of LEC undoped SI-GaAs crystals
Author :
Wang, Z.G. ; Dai, Y.J. ; Li, L.Y. ; Lu, H.P. ; Deng, Z.Y. ; Wan, S.K. ; Xu, S.X. ; Shun, M.F. ; Shun, H. ; Lin, Lih Y.
Author_Institution :
Institute of Senconductors Chinese Academy of Sciences
fYear :
1992
fDate :
21-24 Apr 1992
Firstpage :
279
Lastpage :
284
Keywords :
Crystalline materials; Crystals; Electron mobility; Hall effect; III-V semiconductor materials; Scattering; Semiconductor impurities; Semiconductor materials; Spatial resolution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
Type :
conf
DOI :
10.1109/SIM.1992.752712
Filename :
752712
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2653009
