Title :
A Practical AC Large-Signal Model for GaAs Microwave MESFETs
Author :
Madjar, A. ; Rosenbaum, F.J.
fDate :
April 30 1979-May 2 1979
Abstract :
An AC large-signal model for the GaAs FET is presented. It incorporates the device geometry and semiconductor properties and relates the terminal currents to the instantaneous applied voltages and their derivatives. Its form is suitable for large-signal component design and optimization.
Keywords :
Analytical models; Circuit synthesis; DVD; Design optimization; Gallium arsenide; MESFETs; Resistors; Signal analysis; Solid modeling; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124081
