Title :
Analysis of the steady and transient characteristics of the leakage current in GaAs integrated circuits
Author :
Gual, J. ; Samitier, J. ; Morante, J.R.
Author_Institution :
Universitat de Barcelona, Spain
Keywords :
Analytical models; Context modeling; Electrodes; Gallium arsenide; III-V semiconductor materials; Impact ionization; Integrated circuit modeling; Leakage current; Threshold voltage; Transient analysis;
Conference_Titel :
Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on
Print_ISBN :
0-7503-0242-9
DOI :
10.1109/SIM.1992.752718
