I-V behaviour of p/SI-InP: Fe/n and p/n /SI-InP/Fe/n configurations related to leakage current in buried heterostructure lasers with current blocking SI-InP:Fe

Author

Lourdudoss, S. ; Kjebon, O. ; Nordel, N. ; Borglind, J.

Author_Institution

Swedish Institute of Microelectronics

fYear

1992

fDate

21-24 Apr 1992

Firstpage

331

Lastpage

334

Keywords

Epitaxial growth; Epitaxial layers; Indium phosphide; Iron; Leakage current; Microelectronics; Ohmic contacts; Power lasers; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on

Print_ISBN

0-7503-0242-9

Type

DOI

10.1109/SIM.1992.752720

Filename

752720

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