Characterization of deep level traps in ultrasubmicron modulation-doped field-effect transistors on InP substrate using improved photo-induced current spectroscopy (PICS)

Author

Sung, Roberto ; Das, Mukunda B.

Author_Institution

The Pennsylvania State University

fYear

1992

fDate

21-24 Apr 1992

Firstpage

335

Lastpage

340

Keywords

Charge carrier processes; Electron traps; Epitaxial layers; FETs; HEMTs; Indium phosphide; MODFETs; Optical buffering; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semi-Insulating III-V Materials, 1992 Proceedings of the 7th Conference on

Print_ISBN

0-7503-0242-9

Type

DOI

10.1109/SIM.1992.752721

Filename

752721

Link To Document