DocumentCode
2653178
Title
Fabrication Of Monolithic Two-dimensional Surface-emitting Strained-layer InGaAs/AiGaAs And AllnGaAs/AiGaAs Diode-laser Arrays With Over 50% Differential Quantum Efficiencies
Author
Goodhue, W.D. ; Donnelly, J.P. ; Wang, C.A. ; Lincoln, G.A. ; Bailey, R.J. ; Johnson, G.D. ; Rauschenbach, K.
Author_Institution
Massachusetts Institute of Technology
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
53
Lastpage
54
Keywords
Encapsulation; Fabrication; Gallium arsenide; Indium gallium arsenide; Metallization; Mirrors; Optical arrays; Publishing; Semiconductor laser arrays; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.639016
Filename
639016
Link To Document