DocumentCode
2653396
Title
Microwave Nanosecond Pulse Burnout Properties of GsAs MESFETs
Author
Whalen, J.J. ; Thorn, M. ; Calcatera, M.C.
fYear
1979
fDate
April 30 1979-May 2 1979
Firstpage
443
Lastpage
445
Abstract
Microwave nsec pulse burnout data have been measured at 9 GHz for three 1 micron gate MESFETs. Values of incident pulse power and absorbed energy required to cause burnout are presented and discussed. Also discussed are the dominant failure modes for the overstressed MESFETs.
Keywords
Bonding; Force measurement; Gallium arsenide; Gold; MESFETs; Microwave devices; Noise figure; Power system protection; Pulse measurements; Radar antennas;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location
Orlando, FL, USA
Type
conf
DOI
10.1109/MWSYM.1979.1124096
Filename
1124096
Link To Document