Title :
An X-Band Dual-Gate FET Up-Converter
Author :
Tsai, W.C. ; Paik, S.F. ; Hewitt, B.S. ; Gregory, N. ; Tanzi, P.
fDate :
April 30 1979-May 2 1979
Abstract :
An up-converter using dual-gate GaAs FET was operated at X-band output frequencies with an IF input at 700 MHz. The FET up-converter offers advantages of conversion gain (up to 15 dB), low noise figure (3.2 dB) and built-in port-to-port isolation. The power output saturated at +9 dBm, and the third-order IM product at the 1 dB compression point was -22 dBC.
Keywords :
Circuits; Diodes; Frequency conversion; Gain; Gallium arsenide; Microwave FETs; Noise figure; Noise measurement; Radio frequency; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1979 IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/MWSYM.1979.1124115
