DocumentCode :
2654168
Title :
Recent Progress In In Situ Electron-beam Lithography Of GaAs
Author :
Sugimoto, Y. ; Akita, K. ; Kawanishi, H.
Author_Institution :
Optoelectronics Technology Research Laboratory
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
64
Lastpage :
65
Keywords :
Atmosphere; Etching; Gallium arsenide; Laboratories; Lithography; Molecular beam epitaxial growth; Optical device fabrication; Pattern formation; Scanning electron microscopy; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.639021
Filename :
639021
Link To Document :
بازگشت