Title :
Large piezoelectric effects on photoluminescence properties in 10 nm-thick InGaN quantum wells
Author :
Gotoh, H. ; Tawara, T. ; Kobayashi, Y. ; Kobayashi, N. ; Saitoh, T.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
Abstract :
The piezoelectric effects in InGaN quantum wells are examined using the time-resolved photoluminescence (PL) technique. An extremely large change in PL properties is found in a 10-nm thick quantum well with increasing excitation intensity.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; piezoelectricity; semiconductor quantum wells; wide band gap semiconductors; 10 nm; InGaN; InGaN quantum wells; excitation intensity; photoluminescence properties; piezoelectric effects; time-resolved photoluminescence technique; Capacitive sensors; Gallium arsenide; Laboratories; Laser excitation; MOCVD; Optical surface waves; Photoluminescence; Piezoelectric effect; Ultraviolet sources; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on
Print_ISBN :
0-7803-7766-4
DOI :
10.1109/CLEOPR.2003.1274796
