Title :
Microwave Dual Transistor Delivers 100w CW
Abstract :
This paper reports the results of a dual transistor employing two separate RF bipolar transistors within one package operating near 1 GHz. Significantly improved performance has been achieved over conventional single transistor devices. The final results yielded greater than 100W CW output power with a collector efficiency above 60%.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124160
