DocumentCode :
2655019
Title :
Fabrication Of InGaAs/GaAs Quantum Well Demultiplexing Metal-semiconductor-metal (MSM) Photodetectors Using Selective Bandgap Tuning
Author :
Choudhury, A. N M Masum ; Melman, P. ; Silletti, A. ; Koteles, E.S. ; Foley, B. ; Elman, B.
Author_Institution :
GTE Laboratories Incorporated, 40 Sylvan Road,Waltham,MA02254
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
71
Lastpage :
72
Keywords :
Demultiplexing; Detectors; Fabrication; Gallium arsenide; Indium gallium arsenide; Photoconductivity; Photodetectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.639025
Filename :
639025
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2655019
بازگشت