Title :
Gunn Diode Power Combining at U-Band
Author :
Ma, Y. ; Sun, C.
Abstract :
A modular approach for combining many Gunn devices has been developed. By stacking simple two-diode wafer modules, output power of 620 mW was achieved at around 45 GHz from 6 Gunn devices with a combining efficiency of 86 percent. The locking bandwidth was about 200 MHz with 20 dB locking gain.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124184
