DocumentCode :
2655261
Title :
Self-aligned Si-Zn Diffusion For Impurity-induced Disordering Lasers: Extremely Low Threshold And High Yield
Author :
Zou, W.X. ; Merz, J.L. ; Fu, R.J. ; Hong, C.S.
Author_Institution :
University of California, Santa Barbara,CA93106, 805-893-8465
fYear :
1991
fDate :
29 Jul-2 Aug 1991
Firstpage :
73
Lastpage :
74
Keywords :
Electrons; Etching; Laser modes; Lasers and Electro-Optics Society; Leakage current; Optical device fabrication; P-n junctions; Testing; Threshold current; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
Type :
conf
DOI :
10.1109/LEOSST.1991.639026
Filename :
639026
Link To Document :
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