DocumentCode
2655392
Title
Enhancement of nonlinear interactions due to the light localization phenomena in porous GaP
Author
Golovan, Leonid A. ; Melnikov, Vasily A. ; Zabotnov, Stanislav V. ; Zoteyev, Andrei V. ; Konorov, Stanislav O. ; Fedotov, Andrei B. ; Bestemyanov, Kirill P. ; Gordienko, Vyacheslav M. ; Zheltikov, Aleksei M. ; Timoshenko, Victor Yu ; Kashkarov, Pavel K. ;
Author_Institution
Dept. of Phys., M.V. Lomonosov Moscow State Univ., Russia
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1856
Abstract
We report a more than an order of magnitude enhancement of the second-harmonic and Raman scattering intensities in porous GaP in comparison with crystalline GaP; the effects correlate with a rise of photon diffusion time.
Keywords
III-V semiconductors; gallium compounds; optical harmonic generation; optical materials; porous materials; stimulated Raman scattering; Raman scattering intensity; crystalline GaP; light localization phenomena; magnitude enhancement; nonlinear optical interaction; photon diffusion time; porous GaP; second-harmonic generation; Crystallization; Frequency conversion; Light scattering; Nonlinear optics; Optical harmonic generation; Optical mixing; Optical pumping; Optical scattering; Particle scattering; Raman scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549306
Filename
1549306
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