Title :
A Finite Differential Method based IGBT model in PSPICE
Author :
Puqi Ning ; Jinlei Meng ; Xuhui Wen
Author_Institution :
Lab. of Power Electron. & Power Conversion, Inst. of Electr. Eng., Beijing, China
Abstract :
Other than conventional Fourier models, the carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by a faster Finite Differential Method in PSPICE. The paper presents the physical basis and the practical consideration of a new modeling approach of PiN Diode and IGBT. The model was also verified by simulations and experiments.
Keywords :
SPICE; finite difference methods; insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; power semiconductor diodes; semiconductor device models; Fourier model; IGBT model; PSPICE; PiN diode; carrier diffusion equation; charge dynamics; finite differential method; power bipolar device; Charge carrier density; Insulated gate bipolar transistors; Integrated circuit modeling; Junctions; Mathematical model; SPICE; Semiconductor device modeling; Device model;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104482
