Design of Optimum Equalizers for Microwave Broad Band Solid State Amplifiers

Analytical and computer-aided design techniques for broadband GaAS FET amplifiers are presented. Based on distributed models of the FET, optimum gain-bandwidth limitations have been derived. These results are similar to those published previously which are based on lumped equivalent circuit models of the transistor. The distributed case was also studied by Tucker and some explicit results for a class of different ideal gain functions were derived. The effect of altering the commensurate line length of the models has also been studied.