Title :
A High-Power X-Band Diode Amplifier
Author :
Pankow, R.J. ; Mastroianni, R.G.
Abstract :
The requirement for high power solid state amplifiers at X-Band has necessitated a close investigation of diode power combiners for use as reflection amplifiers. A brassboard amplifier incorporating 17 diodes in all and using a 10 diode TM/sub 010/ mode resonant cavity combiner has been fabricated in a 4 inch diameter 10 inch long cylindrical configuration. A power level of 74 watts peak at a 0.33 duty ratio and 34 dB gain has been achieved.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124217
