Title :
Pulsed Power Performance of GaAs FETS at X-Band
Author :
Temple, S.J. ; Galani, Z. ; Dormail, J. ; Healy, R.M. ; Hewitt, B.S.
Abstract :
The pulsed operation of X-band amplifiers using 4.8 mm power FETs resulted in a nominal output power improvement of 2 dB when operated at elevated drain voltages of up to 18 volts. An ouptut power of 6 W peak with 6 dB gain at 10 GHz was obtained from a balanced amplifier.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124223
