Title :
A K-band 1 Watt GaAs FET Amplifier
Author :
Jun´ichi Sone ; Takayama, Y.
Abstract :
Lumped-element impedance matching techniques were successfully adopted for K-band power GaAs FET amplifiers. The 18 GHz band two-stage amplifier provides 1.05 Watt power output at 1 dB gain compression with 8.1 dB small-signal gain, and 20 GHz band one-stage amplifier has 1.04 Watt power output with 3 dB associated gain.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124224
