CMOS SOI image sensor

Author

Brouk, I. ; Nemirovsky, Y.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

156

Lastpage

159

Abstract

Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 μm CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.

Keywords

1/f noise; CMOS analogue integrated circuits; CMOS image sensors; MOSFET; electric noise measurement; photodiodes; silicon-on-insulator; 0.35 micron; 1/f noise; 400 to 500 nm; CMOS analog circuits; CMOS camera; CMOS image sensor; N-MOS transistors; P-MOS transistors; SOI wafer; noise measurements; photodiode quantum efficiency; saturation bias; subthreshold bias; CMOS analog integrated circuits; CMOS image sensors; CMOS process; Cameras; Circuit noise; Image sensors; Noise measurement; Photodiodes; Semiconductor device modeling; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2004. ICECS 2004. Proceedings of the 2004 11th IEEE International Conference on

Print_ISBN

0-7803-8715-5

Type

conf

DOI

10.1109/ICECS.2004.1399638

Filename

1399638