Title :
An 8.2-GHz, 14.4mW, 1.6dB NF SiGe bipolar LNA with DC current reuse
Author :
Gramegna, Giuseppe ; Magliarisi, Angelo ; Paparo, Mario
Author_Institution :
STMicroelectronics, Catania, Italy
Abstract :
A balanced low noise amplifier (LNA) has been integrated in a 0.25μm BiCMOS technology. To reduce power consumption and improve performances, two stages that share the same DC current have been stacked. A Miller effect neutralization scheme avoids the need to cascode transistors. The LNA takes an area of 0.8 × 1.15 mm2 (bondwire pads excluded) and draws 14.4mW from a 1.8V supply voltage. In this conditions, measured parameters at 8.2-GHz are NF=1.6dB, power gain Gp=22-dB, output P1dB=3.3dBm at 8.2-GHz.
Keywords :
BiCMOS integrated circuits; amplifiers; bipolar integrated circuits; integrated circuit design; silicon compounds; 0.25 micron; 14.4 mW; 22 dB; 8.2 GHz; BiCMOS technology; DC current reuse; Miller effect neutralization; SiGe; bipolar LNA; low noise amplifier; power consumption; Amplifiers; BiCMOS integrated circuits; Bipolar integrated circuits; Integrated circuit design; Silicon compounds;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
Print_ISBN :
0-7803-7800-8
DOI :
10.1109/BIPOL.2003.1274933
