A BiCMOS SiGe low phase noise tunable 30 GHz RF source using a frequency tripler and a VCO

Author

Coustou, A. ; Dubuc, D. ; Graffeuil, J. ; Tournier, E. ; Llopis, O. ; Boulanger, C. ; Plana, R. ; Legoascoze, V.

Author_Institution

LAAS, CNRS, Toulouse, France

fYear

2003

fDate

28-30 Sept. 2003

Firstpage

53

Lastpage

56

Abstract

In this paper, we present a 10/30GHz tripler and an X band VCO, integrated on a single chip, using a 0.35μm, 60GHz-F_MAX BiCMOS SiGe technology. These two circuits are used together in order to implement a low phase noise MMIC 30GHz source. The tripler exhibits a conversion gain in the -5dB range. The VCO exhibits a phase noise of -87dBc/Hz at a 100kHz frequency offset. The supply voltage of the chip is 7 volts and the total DC power consumption is in the range of 900mW. The circuit exhibits a surface area less than 1mm² (probe pads area excluded).

Keywords

BiCMOS integrated circuits; MIMIC; frequency multipliers; integrated circuit design; silicon compounds; voltage-controlled oscillators; 0.35 micron; 10 GHz; 100 kHz; 30 GHz; 60 GHz; 7 V; 900 mW; BiCMOS technology; DC power consumption; RF source; SiGe; X band VCO; conversion gain; frequency offset; frequency tripler; low phase noise MMIC; supply voltage; voltage controlled oscillator; BiCMOS integrated circuits; Frequency conversion; Integrated circuit design; MIMICs; Silicon compounds; Voltage controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the

ISSN

1088-9299

Print_ISBN

0-7803-7800-8

Type

conf

DOI

10.1109/BIPOL.2003.1274934

Filename

1274934