• DocumentCode
    2656410
  • Title

    Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices

  • Author

    Fu, C.H. ; Chang-Liao, K.S. ; Chuang, H.C. ; Wang, T.K. ; Huang, S.F. ; Tsai, W.F. ; Ai, C.F.

  • Author_Institution
    Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The electrical characteristics of high-k gated MOS devices can be improved by a nitridation treatment using plasma immersion ion implantation (PHI). The suitable process conditions for PHI treatment are at a low ion energy and with a short implantation time.
  • Keywords
    MIS devices; plasma immersion ion implantation; PHI; electrical characteristics; high-k gated MOS devices; nitridation treatment; nitrogen incorporation; plasma immersion ion implantation; Annealing; Channel bank filters; Electric variables; High K dielectric materials; High-K gate dielectrics; Impurities; Leakage current; MOS devices; Nitrogen; Plasma immersion ion implantation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422241
  • Filename
    4422241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656410