• DocumentCode
    2656450
  • Title

    InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation

  • Author

    Chang, Y.C. ; Huang, M.L. ; Lee, Y.J. ; Lee, K.Y. ; Lin, T.D. ; Hong, M. ; Kwo, J. ; Liao, C.C. ; Cheng, K.Y. ; Lay, T.S.

  • Author_Institution
    Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, there is no surface cleaning and interfacial passivation layer prior to the ALD-HfO2. However, the oxide/InGaAs interface is atomically sharp without the existence of arsenic oxides, strongly indicating self-cleaning of the ALD process. Excellent well-behaved J-EG and C-V characteristics of ALD-HfO2/In0.53Ga0.47As/InP have been demonstrated in this work.
  • Keywords
    III-V semiconductors; MOSFET; atomic layer deposition; hafnium compounds; indium compounds; ALD process; ALD-HfO2; HfO2; In0.53Ga0.47As-InP; InGaAs n-MOS devices; atomic layer deposition process; metal gate; self-cleaning; Atomic layer deposition; Atomic measurements; Capacitance-voltage characteristics; Educational institutions; Gallium arsenide; Hafnium oxide; Indium gallium arsenide; Indium phosphide; Passivation; Surface cleaning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422243
  • Filename
    4422243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656450