Electrical properties of HfO2/InAs MOS capacitors

Author

Wheeler, Dana ; Seabaugh, Alan ; Froberg, Linus ; Thelander, Claes ; Wernersson, Lars-Erik

Author_Institution

Univ. of Notre Dame, Notre Dame

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this work, the first investigation of Au/Ti/HfO₂/InAs metal-oxide-semiconductor capacitors is reported. The HfO₂ is deposited by atomic layer deposition and characterized by current-voltage and capacitance-voltage measurements. The effects of surface treatment, deposition temperature, post-deposition anneal, and film thickness on breakdown field, leakage current, capacitance, and frequency dispersion are studied with the aim of producing HfO₂-InAs interfaces suitable for use in InAs-channel MOSFETs.

Keywords

III-V semiconductors; MOS capacitors; annealing; atomic layer deposition; capacitance; dielectric thin films; gold; hafnium compounds; indium compounds; leakage currents; semiconductor device breakdown; surface treatment; thin film capacitors; titanium; Au-Ti-HfO₂-InAs; InAs-channel MOSFET; MOS capacitors; atomic layer deposition; breakdown field; capacitance-voltage measurements; current-voltage measurements; deposition temperature; electrical properties; film thickness; frequency dispersion; leakage current; metal-oxide-semiconductor capacitors; post-deposition anneal; surface treatment; Atomic layer deposition; Atomic measurements; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Current measurement; Gold; Hafnium oxide; Surface treatment; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422244

Filename

4422244