DocumentCode
2656515
Title
Integration of selectively implanted collector (SIC) of SiGe:C HBT for optimised performance and manufacturability
Author
Chai, Francis K. ; Kirchgessner, Jim ; Cross, Ronald ; Hammock, Donna ; Lesher, Chris ; Morgan, Dave ; Rueda, Heman ; Tang, Jin ; Niu, Guofu ; Stewart, Susan ; John, Jay ; Wipf, Sandy ; Brown, Bill
Author_Institution
Digital DNA Labs., Motorola Inc., Tempe, AZ, USA
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
115
Lastpage
118
Abstract
An investigation of various selectively implanted collector (SIC) integration options for SiGe:C HBT devices is reported. SIC integration before and after SiGe:C base epi as well as the size and concentration of the SIC region are evaluated. Tradeoffs between device performance and manufacturability for various SIC integration options are discussed.
Keywords
carbon; epitaxial growth; heterojunction bipolar transistors; semiconductor device manufacture; semiconductor process modelling; silicon compounds; HBT devices; SIC integration; SIC region; SiGe:C; heterojunction bipolar transistor; selectively implanted collector; Carbon; Epitaxial growth; Heterojunction bipolar transistors; Semiconductor device manufacture; Semiconductor process modeling; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274948
Filename
1274948
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