Barrier height modulation and dipole moments in metal-molecule-silicon diodes

Author

Scott, Adina ; Risko, Chad ; Ratner, Mark A. ; Janes, David B.

Author_Institution

Purdue Univ., West Lafayette

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this study, Schottky barrier height in a series of gold-molecule-n Si diodes has been determined by reverse-bias capacitance-voltage measurements. Trends in measured barrier height correlate with calculated molecular dipoles. Samples were prepared by electrochemically grafting para-substituted aryl-diazonium salts on n-type silicon substrates. Bromobenzene (B-benz), diethylaminobenzene (D-benz), 2-methyl 4-nitrobenzene (FRS), methoxybenzene (M-benz), and nitrobenzene (N-benz) molecular layers were used.

Keywords

Schottky barriers; Schottky diodes; capacitance; elemental semiconductors; gold; molecular electronics; molecular moments; organic compounds; silicon; 2-methyl 4-nitrobenzene; Au-Si; Schottky barrier height; barrier height modulation; bromobenzene; diethylaminobenzene; electrochemical grafting; metal-molecule-silicon diodes; methoxybenzene; molecular dipole moments; molecular layers; n-type silicon substrates; nitrobenzene; para-substituted aryl-diazonium salts; reverse-bias capacitance-voltage measurements; Capacitance measurement; Capacitance-voltage characteristics; Educational institutions; Electrostatic measurements; Etching; Extraterrestrial measurements; Gold; Schottky diodes; Semiconductor diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422248

Filename

4422248