DocumentCode
2656579
Title
A low-voltage bandgap reference with resistive subdivision
Author
Xing, Xu ; Xichuan, Wang ; Cuiying, Si
Author_Institution
Microelectron. Res. & Dev. Center, Shanghai Univ.
fYear
2006
fDate
27-28 June 2006
Firstpage
12
Lastpage
15
Abstract
In this paper, a sub IV bandgap voltage reference (BGR) with resistive subdivision in CMOS technology is described. The proposed topology is based on the combination of two elements´ voltages of opposite temperature coefficients. By using resistive subdivision methods, maximum input voltage of a p-channel input operational amplifier can be reduced and the problem of sub IV supply voltage is solved without complex low supply voltage amplifier. Inserting a capacitance Cc to ground at VREF can result in an improvement in power supply rejection ratio. The proposed circuit was verified by spectre simulations, using standard 0.25 mum CMOS process, and the results show that the presented bandgap reference can successfully operate at sub IV supply and has a temperature coefficient of 25ppm/degC over a temperature range from 0degC to 100degC. The power supply rejection ratio (PSRR) is high at low frequencies, and an added Cc is helpful for PSRR at high frequencies
Keywords
CMOS analogue integrated circuits; energy gap; integrated circuit design; low-power electronics; reference circuits; 0 to 100 C; 0.25 micron; CMOS technology; low-voltage band gap reference; power supply rejection ratio; resistive subdivision; sub IV bandgap voltage reference; CMOS technology; Capacitance; Frequency; Land surface temperature; Low voltage; Operational amplifiers; Photonic band gap; Power supplies; Temperature distribution; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
High Density Microsystem Design and Packaging and Component Failure Analysis, 2006. HDP'06. Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0488-6
Type
conf
DOI
10.1109/HDP.2006.1707557
Filename
1707557
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