• DocumentCode
    2656632
  • Title

    Device and circuit modeling using novel 3-state quantum dot gate FETs

  • Author

    Jain, F.C. ; Heller, E. ; Karmakar, S. ; Chandy, J.

  • Author_Institution
    Univ. of Connecticut, Storrs
  • fYear
    2007
  • fDate
    12-14 Dec. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents simulation of three-state behavior recently reported in quantum dot gate field-effect transistor (FET) structures. The model self-consistently solves Schrodinger and Poisson equations with built-in transfer of carriers from the inversion channel to two layers of cladded SiOx-Si quantum dots (QDs) forming the gate, predicting the "intermediate state" in the transfer Id-Vg characteristic. Circuit model and simulations for a 3-bit ADC are also presented.
  • Keywords
    Poisson equation; Schrodinger equation; field effect transistors; quantum dots; 3-bit ADC; 3-state quantum dot gate FET; Poisson equations; Schrodinger equations; circuit model-simulations; field-effect transistor; CMOS logic circuits; Circuit simulation; Computational modeling; Computer simulation; Educational institutions; FETs; Predictive models; Quantum computing; Quantum dots; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2007 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-1892-3
  • Electronic_ISBN
    978-1-4244-1892-3
  • Type

    conf

  • DOI
    10.1109/ISDRS.2007.4422254
  • Filename
    4422254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656632