DocumentCode
2656675
Title
Improving BiCMOS technologies using BJT parametric mismatch characterisation
Author
Tuinhout, Hans P.
Author_Institution
Philips Res., Eindhoven, Netherlands
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
163
Lastpage
170
Abstract
Why and how can parametric mismatch studies help to improve IC-technologies? After an introduction on the importance of parametric mismatch for performance and yield of mixed-signal as well as digital technologies, the basic terminology and techniques for BJT mismatch fluctuation assessment are reviewed. Two examples are discussed to demonstrate how parametric mismatch fluctuation studies help to improve better device architecture of poly-emitter BJTs. The ensuing process refinements result in better circuit functionality as well as yield improvements.
Keywords
BiCMOS integrated circuits; bipolar transistors; circuit optimisation; integrated circuit yield; BJT parametric mismatch; BiCMOS; bipolar junction transistor; device architecture; digital technology; integrated circuit functionality; integrated circuit yield; mixed-signal; parametric mismatch fluctuation; poly-emitter BJT; BiCMOS integrated circuits; Bipolar transistors; Circuit optimization; Yield estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274959
Filename
1274959
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