DocumentCode
2656733
Title
Advanced rad hard SRAM development and hardware test results
Author
Doyle, Scott ; Hoang, Tri ; Ross, Jason ; Haddad, Nadim ; Lawrence, Reed ; Chan, Ernie
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
Electrical and radiation test results will be presented on a deep submicron radiation hardened 16 Mb SRAM IC. The significant technology development and device design challenges will be chronicled from initial SEE modeling, to testchip hardware, to final electrical characterization and radiation test validation. Model to hardware correlation results and model validation will be described. These results pave the way for further sub-100 nm device development.
Keywords
SRAM chips; integrated circuit testing; logic testing; radiation hardening (electronics); SEE modeling; deep submicron radiation hardening; electrical characterization; rad hard SRAM IC; testchip hardware; CMOS technology; Hardware; Integrated circuit modeling; Integrated circuit testing; Performance evaluation; Radiation hardening; Random access memory; Resistors; Semiconductor device modeling; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422259
Filename
4422259
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