Proton-induced SEU in SiGe digital logic at cryogenic temperatures

Author

Sutton, Akil K. ; Cressler, John D. ; Carts, Martin A. ; Marshall, Paul W. ; Pellish, Jonathan A. ; Reed, Robert A. ; Alles, Michael L. ; Niu, Guofu

Author_Institution

Georgia Inst. of Technol., Atlanta

fYear

2007

fDate

12-14 Dec. 2007

Firstpage

1

Lastpage

2

Abstract

In this work we present, for the first time, experimental results confirming an increase in single event upset (SEU) susceptibility at cold temperatures using 63 MeV protons incident on liquid-nitrogen immersed 16-bit shift registers. Silicon germanium (SiGe) BiCMOS technology has the potential to be a key platform for extreme environment electronics due to its record (Si-based) cryogenic performance and built-in multi-Mrad (SiO₂) total ionizing dose (TID) tolerance.

Keywords

BiCMOS logic circuits; Ge-Si alloys; cryogenic electronics; proton effects; shift registers; BiCMOS technology; SiGe; cryogenic temperatures; digital logic; electron volt energy 63 MeV; liquid-nitrogen immersed 16-bit shift registers; proton-induced single event upset susceptibility; total ionizing dose tolerance; Circuit testing; Cooling; Cryogenics; Germanium silicon alloys; Logic; Protons; Shift registers; Silicon germanium; Single event upset; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2007 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-1892-3

Electronic_ISBN

978-1-4244-1892-3

Type

conf

DOI

10.1109/ISDRS.2007.4422261

Filename

4422261