DocumentCode
2656825
Title
A 5V complementary-SiGe BiCMOS technology for high-speed precision analog circuits
Author
El-Kareh ; Balster, S. ; Leitz, W. ; Steinmann, P. ; Yasuda, H. ; Corsi, M. ; Dawoodi, K. ; Dirnecker, C. ; Foglietti, P. ; Haeusle, A. ; Menz, P. ; Ramin, M. ; Scharnagl ; Schiekofe, M. ; Schober, M. ; Schulz, U. ; Swanson, L. ; Tatman, D. ; Waitschul, M
Author_Institution
Texas Instruments, Freising, Germany
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
211
Lastpage
214
Abstract
A novel complementary-SiGe BiCMOS technology developed for ultra-high speed precision analog circuits is presented. The modular process offers comparable NPN and PNP performance utilizing unique interface and SiGe base process.
Keywords
BiCMOS analogue integrated circuits; MIM devices; high-speed integrated circuits; integrated circuit design; integrated circuit manufacture; silicon compounds; thin film transistors; 5 V; MIM capacitors; NPN performance; PNP performance; SiGe; complementary BiCMOS; high-speed precision analog circuits; thin-film transistors; BiCMOS analog integrated circuits; Integrated circuit design; Integrated circuit manufacture; MIM devices; Silicon compounds; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274968
Filename
1274968
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