DocumentCode :
2656827
Title :
Impact of nitridation on negative and positive charge buildup in SiC gate oxides
Author :
Rozen, John ; Dhar, Sarit ; Williams, John R. ; Feldman, Leonard C.
Author_Institution :
Vanderbi.lt Univ., Nashville
fYear :
2007
fDate :
12-14 Dec. 2007
Firstpage :
1
Lastpage :
2
Abstract :
In conclusion, we observe that nitrogen passivation of gate oxides on 4H-SiC suppresses interface state generation during electron injection but is responsible for an increase in hole traps. These phenomena are thought to be correlated with the bonding of nitrogen atoms in the interfacial layer. Our results highlight an undesired effect of SiC gate oxide nitridation. It suggests refining the processing steps to optimize both the interface state density and the amount of hole traps.
Keywords :
MIS devices; hole traps; passivation; silicon compounds; wide band gap semiconductors; SiC; gate oxides; hole traps; interface state density; interfacial layer; negative-positive charge buildup; nitrogen passivation; Annealing; Educational institutions; Electron traps; Interface states; Nitrogen; Passivation; Physics; Silicon carbide; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2007 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-1892-3
Electronic_ISBN :
978-1-4244-1892-3
Type :
conf
DOI :
10.1109/ISDRS.2007.4422265
Filename :
4422265
Link To Document :
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