DocumentCode
2656876
Title
An examination of bipolar transistor noise modelling and noise physics using microscopic noise simulation
Author
Cui, Yan ; Guofu Nui ; Harame, David L.
Author_Institution
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
fYear
2003
fDate
28-30 Sept. 2003
Firstpage
225
Lastpage
228
Abstract
This paper examines bipolar transistor noise modelling and noise physics using microscopic noise simulation. Transistor terminal current and voltage noises resulting from velocity fluctuations of electrons and holes in the base, emitter, collector, and substrate are simulated using a new technique, and compared with modelling results. The relevant importance as well as model-simulation discrepancy is analyzed for each physical noise source.
Keywords
bipolar transistors; circuit simulation; semiconductor device models; semiconductor device noise; base; bipolar transistor noise modelling; collector; electrons; emitter; holes; microscopic noise simulation; model-simulation discrepancy; noise physics; noise source; substrate; transistor terminal current; velocity fluctuations; voltage noises; Bipolar transistors; Semiconductor device modeling; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
ISSN
1088-9299
Print_ISBN
0-7803-7800-8
Type
conf
DOI
10.1109/BIPOL.2003.1274971
Filename
1274971
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