• DocumentCode
    2656902
  • Title

    An improved method for determining the transit time of Si/SiGe bipolar transistors

  • Author

    Malorny, M. ; Schroter, M. ; Celi, D. ; Berger, D.

  • Author_Institution
    Electron Devices & Integrated Circuits, Dresden Univ. of Technol., Germany
  • fYear
    2003
  • fDate
    28-30 Sept. 2003
  • Firstpage
    229
  • Lastpage
    232
  • Abstract
    An improved method for determining the transit time and forward-bias base emitter depletion is presented. The method has been verified and applied to experimental data of advanced Si/SiGe HBTs.
  • Keywords
    bipolar transistors; semiconductor device measurement; silicon compounds; HBT; SiGe; bipolar transistor; forward-bias base emitter depletion; transit time; Bipolar transistors; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-7800-8
  • Type

    conf

  • DOI
    10.1109/BIPOL.2003.1274972
  • Filename
    1274972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2656902