Title :
The ZVS voltage-mode class-D amplifier, an eGaN® FET-enabled topology for highly resonant wireless energy transfer
Author :
de Rooij, Michael A.
Author_Institution :
Efficient Power Conversion Corp., El Segundo, CA, USA
Abstract :
The popularity of highly resonant, loosely coupled, wireless energy transfer systems operating at 6.78 MHz has increased dramatically over the last few years. In this paper we present the zero voltage switching (ZVS) voltage mode class D amplifier topology and evaluate its performance as a suitable A4WP Class-3 compliant amplifier using eGaN FETs and compare the performance with MOSFETs. Experimental verification has revealed that the ZVS class D amplifier can inherently drive a reflected load impedance range from +20j Ω though -30j Ω and 1.7 Ω through 57 Ω while maintaining A4WP Class-3 compliance, which is a significantly wider range than any other topology explored as of this date. The eGaN FET based amplifier was found to have 30 % lower losses and operate as much as 17°C cooler when delivering 16 W into the load than a MOSFET version.
Keywords :
III-V semiconductors; amplifiers; field effect transistors; gallium compounds; inductive power transmission; resonant power convertors; wide band gap semiconductors; zero voltage switching; A4WP class-3 compliant amplifier; GaN; MOSFET-enabled topology; ZVS voltage-mode class-D amplifier; frequency 6.78 MHz; power 16 W; reflected load impedance; resistance 1.7 ohm to 57 ohm; resonant wireless energy transfer system; zero voltage switching; Capacitance; Impedance; Logic gates; MOSFET; Wireless communication; Zero voltage switching; 6.78 MHz; Highly Resonant; Loosely Coupled; MOSFET; Wireless Energy Transfer; ZVS Class D; eGaN FET;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE
Conference_Location :
Charlotte, NC
DOI :
10.1109/APEC.2015.7104562
