Simulation study on negative read biasing effects for the reliable operation of NOR type floating gate flash memory devices

In this study, the negative biasing effects on the interference is investigated as process and operation parameters such as channel doping concentration, channel thickness and magnitude of negative biasing in the read operation. The electrical interference can be termed as paired cell interference (PCI) more specifically, since the two different devices face each other having a common silicon channel between them. The dependency of PCI on doping concentration is larger for right control gate (RCG) bias closer to zero voltage but it disappears as the RCG becomes more negative.