DocumentCode
2657108
Title
Fin and recess channel MOSFET (FiReFET) for performance enhancement of Sub-50 nm DRAM cell
Author
Song, Jae Young ; Kim, Jong Pil ; Kim, Sang Wan ; Jung, Han Ki ; Park, Jae Hyun ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution
Seoul Nat. Univ., Seoul
fYear
2007
fDate
12-14 Dec. 2007
Firstpage
1
Lastpage
2
Abstract
In this paper, we present a novel fin and recess channel MOSFET (FiReFET) which has low leakage current as well as excellent current drivability. In contrast to the bulk-FinFET, the FiReFET has trench gates which can lead to the reduction of the off-state leakage current without the punch-through stop implantation. Furthermore, it is possible to enhance the on-state current against the RCAT using the thin fin channel and the wide source/drain region.
Keywords
DRAM chips; MOSFET; leakage currents; DRAM cell; FiReFET; RCAT; dynamic random-access memory; fin-recess channel MOSFET; leakage current; recess-channel-array transistor; wide source-drain region; Analytical models; Degradation; Educational institutions; Electronic mail; Leakage current; MOSFET circuits; Paper technology; Random access memory; Semiconductor device doping; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2007 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-1892-3
Electronic_ISBN
978-1-4244-1892-3
Type
conf
DOI
10.1109/ISDRS.2007.4422280
Filename
4422280
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