Title :
A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications
Author :
Decker, D.R. ; Gupta, A.K. ; Petersen, W. ; Ch´en, D.R.
Abstract :
A monolithic GaAs integrated amplifier has been constructed for the 500 to 1000 MHz intermediate frequency band. The amplifier provides 8.0 /spl plusmn/ 1.5 dB gain across the band. The output of the amplifier utilizes a source follower configuration to obtain a favorably low output VSWR of less than 1.5:1 (return loss >15 dB). All bias lines with integral bypass capacitors are contained on the chip and this amplifier is suitable for further integration as a building block of a monolithically integrated receiver front end.
Conference_Titel :
Microwave symposium Digest, 1980 IEEE MTT-S International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/MWSYM.1980.1124288