• DocumentCode
    2657204
  • Title

    Super Low Noise Packaged GaAs FETS for Ku Band

  • Author

    Suzuki, T. ; Ito, M. ; Nara, A. ; Kadowaki, Y. ; Nakatani, M.

  • fYear
    1980
  • fDate
    28-30 May 1980
  • Firstpage
    367
  • Lastpage
    369
  • Abstract
    By selecting a high quality GaAs epitaxial wafer and reducing parasitics, packaged FETs with NF/sub min/ of 2.4 dB and G/sub a/ of 7.5 dB at 18 GHz were produced. Using these FETs, a single stage amplifler with NF of 2.7 dB and G of 6.4 dB at 18 GHz was constructed.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave symposium Digest, 1980 IEEE MTT-S International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1980.1124289
  • Filename
    1124289
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2657204